parameter conditions forward rectified current forward surge current reverse current thermal resistance diode junction capacitance storage temperature ambient temperature = 50 c o 8.3ms single half sine-wave superimposed on rate load (jedec methode) f=1mhz and applied 4v dc reverse voltage symbol min. typ. max. unit i o i fsm i r r ja c j t stg a a a o c/w o c pf 2.0 70 5.0 +175 -65 20 v = v t = 25 c r rrm j o v = v t = 100 c r rrm j o junction to ambient 25 150 50 100 200 35 70 140 symbols v rrm (v) v rms v r (v) (v) *1 *2 *3 *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage@i =2.0a f *5 maximum reverse recovery time, note 1 v f (v) *4 400 600 280 420 1.30 -55 to +150 800 1000 560 700 t rr (ns) *5 50 75 50 100 200 400 600 800 1000 1.00 1.70 (c) o operating temperature t, j 0.213(5.4) 0.197(5.0) 0.016(0.4) typ. 0.142(3.6) 0.126(3.2) 0.075(1.9) 0.067(1.7) 0.032 (0.8) typ. 0.032(0.8) typ. note 1. reverse recovery time test condition, i =0.5a, i =1.0a, i =0.25a frrr mura205bg mura210bg mura220bg mura240bg MURA260BG mura280bg mura2100bg mura205bg thru mura2100bg chip silicon rectifier 2.0a surface mount high effciency rectifiers - 50v-1000v features batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. low profile surface mounted application in order to optimize board space. high current capability. high surge current capability. glass passivated chip junction. ? ultrafast recovery time for high efficiency. lead-free parts meet rohs requirments. ? ? ? ? ? ? ? suffix "-h" indicates halogen free parts, ex. mura205bg-h. mechanical data ? ? ? ? ? ? epoxy:ul94-v0 rated flame retardant case : molded plastic, jedec do-214aa / smb terminals : solder plated, solderable per mil-std-750, method 2026 polarity : indicated by cathode band mounting position : any weight : 0.09 gram approximated smb package outline dimensions in inches and (millimeters) maximum ratings (at t =25 o c unless otherwise noted) a page 1/2 @ 2010 copyright by american first semiconductor
.4 .6 .8 1.0 1.2 1.4 .001 .01 .1 1.0 10 rating and characteristic curves fig.1-typical forward characteristics fig.5-typical junction capacitance instantaneous for ward current ,(a) forward voltage,(v) pulse width 300us 1% duty cycle (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non- inductive notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | | | | | | | | 1cm set time base for 50 / 10ns / cm trr d.u.t. fig.3- test circuit diagram and reverse recovery time characteristics 10 noninductive 50 noninductive t =25 c j fig.2-typical forward current average for ward current ,(a) 0.4 0.8 1.2 1.6 2.0 2.4 single phase half wave 60hz resistive or inductive load p.c.b. mounted on 0.3" * 0.3" (8.0mm * 8.0mm) copper pad areas derating curve ambient temperature ( c) 1.6 1.8 MURA260BG~mura2100bg mura240bg mura205bg~mura220bg reverse voltage,(v) junction cap acitance,(pf) 175 120 100 80 60 40 20 0 .01 .05 .1 .5 1 5 10 50 100 0 25 50 75 100 125 150 175 0 fig.4-maximum non-repetitive forward surge current 20 0 40 60 80 100 number of cycles at 60hz 110 5 50 100 t =25 c j 8.3ms single half sine wave jedec method peak for ward surge current ,(a) mura205bg thru mura2100bg page 2/2 www.first-semi.com
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